Trap-assisted space charge limited transport in short channel MoS2 transistor

We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.Comment: 5 pages, 3 figure

Compensation of Distribution System Voltage using DVR

A dynamic voltage restorer (DVR) is a power-electronic controller that can protect sensitive loads from disturbances in the supply system. In this paper, it is demonstrated that this device can tightly regulate the voltage at the load terminal against imbalance or harmonic in the source side. The behavior of the device is studied through steady-state analysis, and limits to achievable performance are found. This analysis is extended to the study of transient operation where the generation of the reference voltage of the DVR is discussed. Once the reference signals are generated, they are tracked using a switching band scheme. A suitable structure in which the DVR is realized by voltage-source inverters (VSIs) is also discussed. Particular emphasis to the rating of this device is provided. Extensive simulation results are included to illustrate the operating principles of a DVR